Davies.ppt.pptVIP

Report on PLKriteshwar Kohli, Gordon Davies, King’s College London Technical details Samples irradiated with 1e12 to 3e16 cm-2 Etched in HF:water 1:20 for ~20 mins, RT, to give surface finish visually like highly polished Si surface Measured at ~4 K, in liquid helium, looking at top few micrometres. As-received, and annealed at 80 C 450 C. The technique High energy resolution : unique defect characterisation for sharp lines... …but broad band PL is not identified. PL must be seen… …defects may be non-radiative (VV) or PL quenched by other defects. Annealing data 7 different fluences (1e12 to 3e16 cm-2) Spectra as received and 4 anneals at 80 C and one at 450 C 42 spectra Sample spectra only here Recovery at 80 C (4 mins) Recovery at 80 C (30 mins) Recovery at 80 C (12 hrs) Recovery at 80 C (24 hrs) Anneal at 450 C (30 mins) Summary of annealing As received: low PL intensity, CiOi plus broad band At 80 C, no change in bandshapes after 4 mins. After 30 mins, start of observing weak CiCs and W; W continues to increase after 12 hrs and 24 hrs. After 450 C, ‘point defects’ to 1e14 cm-2; increasing dominance of broad band at higher fluences. Problems: 1. Quenching From ion-implantation at nominal RT, PL is quenched when the mean distance between VVs is less than ~50 atoms. Assume production rate for VV of 1.3 cm-1. At maximum fluence, 3e16 cm-3, the mean VV separation is 110 atoms. Implies quenching is not important. Problems: 2. Mobility of C Cs + I -- Ci Ci + Oi -- CiOi Thermal diffusion of Ci is D = 0.44 exp (-870 meV/kT ) cm2 s-1 , so Random walk in 1 second is by 2e-8 cm at 20 C and by 2e-6 cm at 100 C. Compare: mean separation of carbon of 7e-6 cm. Infra-red absorption data? Problems: 3. Carbon content Assume production rates for VV of 1.3 cm-1, and VO of 0.7 cm-1 . Possibly for I, R = 0.7 cm-1 , and for I2 = 1.3 cm-1 ? [C] 2.5e15 cm-3 from SIMS. At dose 3e15 cm-2 , I’s exceed [C] Cs + I -- Ci Ci + Oi -- CiOi CiOi + I -- ICiOi