Davies.ppt.pptVIP

Report on PLKriteshwar Kohli, Gordon Davies, King’s College London Technical details Samples irradiated with 1e12 to 3e16 cm-2 Etched in HF:water 1:20 for ~20 mins, RT, to give surface finish visually like highly polished Si surface Measured at ~4 K, in liquid helium, looking at top few micrometres. As-received, and annealed at 80 C 450 C. The technique High energy resolution : unique defect characterisation for sharp lines... …but broad band PL is not identified. PL must be seen… …defects may be non-radiative (VV) or PL quenched by other defects. Annealing data 7 different fluences (1e