Large-depthdefectprofilinginGaAswafersaftersawcutting.PDFVIP

Large-depth defect profiling in GaAs wafers after saw cutting F. Börner, S. Eichler, A. Polity, R. Krause-Rehberg Martin-Luther-Universität Halle-Wittenberg Fachbereich Physik Friedemann-Bach-Platz 6 06108 Halle Germany R. Hammer, M. Jurisch Freiberger Compound Materials GmbH Am Junger Löwe Schacht 5 09599 Freiberg Germany Introduction motivation: • defect-free wafer material - demands of industry • question: damage depth after sawing • ordered by Freiberger material: • undoped GaAs (100) • wafers were sawn from the ingot by a diamond saw cutter • six different advances of the saw blade according to the sample number experiment: • Scanning electron microscopy • variable-energy positron annihilation spectroscopy • conventional positron lifetime spectroscopy • annealing behavior F. Börner et al., FB Physik, Martin-Luther-Universität Halle-Wittenberg Scanning electron microscopy Extended defects at the surface and in the near- surface region of the wafers: • dislocations (2-D) • micro cracks (3-D) a) typical cone-like micro-cracks mean diameter: 5µm mean depth: 5 µm b) typical overall view of the surface crack density: 1× 1010 m-2 F. Börner et al., FB Physik, Martin-Luther-Universität Halle-Wittenberg Slow-positron beam technique •maximum positron energy of 40 keV mean implantation depth of 3.3 µm •stepwise removing (about 2 µm) of the surface