StudyontheSubsurfaceDamageDistributionoftheSilicon.PDFVIP

Advanced Materials Research Vols. 126-128 (2010) pp 113-118 Online available since 2010/Aug/11 at © (2010) Trans Tech Publications, Switzerland doi:10.4028//AMR.126-128.113 Study on the Subsurface Damage Distribution of the Silicon Wafer Ground by Diamond Wheel S. Gao1, a, R.K. Kang1, b, D.M. Guo1, c, Q.S. Huang1, d 1 Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, China; a b c d gaoshangf@, kangrk@, guodm@, quansheng@ Keywords: Silicon wafer; Grinding; Subsurface damage; Diamond grinding whee Abstract. Using the cross-section angle polishing microscopy, the subsurface damage of the silicon wafers (100) ground by the diamond wheels with different grain size were investigated, and subsurface damage distributions in different crystal orientations and radial locations of the silicon wafers (100) were analyzed. The experiment results showed that the grain size of diamond wheel has great influence on the subsurface damage depth of the ground wafer. On the ground wafer without spark-out process, the subsurface damage depth increased along the radical direction from the centre to the edge and the subsurface damage depth in 110 crystal orientation was larger than that in 100 crystal orientation; but on the ground wafer with spark-out process, the subsurface damage depth in different crystal orientations and radial locations become uniform. Introduction Monocrystalline silicon wafers are widely used as substrates in IC manufacturing fields. The surface layer quality directly affects the performance and the manufacturing yield of IC device. With the increase of the wafer diameter, ultra-precision grinding is widely applied in manufact