Electricalactivityandmigrationof90°partialdislocationsin.PDFVIP

Home Search Collections Journals About Contact us My IOPscience Electrical activity and migration of 90° partial dislocations in SiC This content has been downloaded from IOPscience. Please scroll down to see the full text. 2007 New J. Phys. 9 6 (/1367-2630/9/1/006) View the table of contents for this issue, or go to the journal homepage for more Download details: IP Address: 20 This content was downloaded on 17/06/2014 at 15:09 Please note that terms and conditions apply. Electrical activity and migration of 90◦ partial dislocations in SiC 1,4 1 ¨ 2 3 G Savini , M I Heggie , S Oberg and P R Briddon 1 Department of Chemistry, University of Sussex, Brighton BN1 9QJ, UK 2 Department of Mathematics, University of Luleå, SE-97187, Luleå, Sweden 3 School of Natural Sciences, University of Newcastle upon Tyne, Newcastle upon Tyne, NE1 7RU, UK E-mail: g.savini@sussex.ac.uk New Journal of Physics 9 (2007) 6 Received 12 September 2006 Published 17 January 2007 Online at / doi:10.1088/1367-2630/9/1/006 Abstract. SiC p-i-n diodes exhibit an increase in the voltage drop under forward bias which has been linked with the increased mobility of partial dislocations. Through first-principles calculations, we investigated the Si(g) and C(g) core 90◦ partials in 4H-SiC. We showed that both dislocations can sustain the asymmetric and symmetric reconstructions along the dislocation line. The latter reconstructions are always electrically act