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Hybrid Aging Delay Model Considering the PBTI and TDDB.pdf
276 JOURNALOFELECTRONIC SCIENCEANDTECHNOLOGY,VOL.13,NO.3,SEPTEMBER2015
HybridAgingDelayM odelConsideringthePBTIand
TDDB
YongMiao,Map-XiangYi,Gui—MapZhang,andDa—W enXu
Abstrac手_J ith a 45 am process technique.the Firstly,regardingtothePBTI,theelectrontrappingin
shrinkingsilicon featuresizebringsin ahigh—k/metal thebulkofthehigh.koxidationlayeristhemainreasonofr
gate which significantly exacerbates thepositivebias the threshold voltage ( )shifts .In re
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