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A New AlGaAsGaAsInGaAs Lasing Switch Grown by MBE.pdf
Active and Passlw Elec. Comp., 2001, Vol. 23, pp. 231-236 O 2001 OPA (OveneasPubHshen Aociation) N.V.
Reprints available directly from the ImbHsher Published by license under
Photocopying permitted by Hcense only the Gordon and Breach Science
PubHsher imprint.
A NEW AIGaAs/GaAs/InGaAs LASING
SWITCH GROWN BY MBE
MING RONG LEE, K. F. YARN* and W. R. CHANG
Far East College, Department ofElectrical Engineering,
Optoeiectronic Semiconductor Center, Hsin-Shih, Tainan,
Taiwan 744, Republic of China
(Received30 June 2000; Infinalform 12 July 2000)
A quantumwell optoelectronic switch (QWOES)based on regenerative loop ofpotential
barrier lowering resulted from the forward biased pn junction is demonstrated in a
A1GaAs/GaAs/InGaAs double heterostructure. Excellent electrical switching character-
istics with a high voltage control efficiency (=Vs/VH) of 6.8 have been obtained when
the device is operated in the dark. Typical OFF-and ON-state resistances are 120kft,
25 f, respectively. A lasing threshold current density, front slope efficiency and external
differential quantum efficiency measured in as-cleaved device are 210A/cm, 0.4mW/mA
and 31.4%, respectively. The peak emission wavelength is centered at about 974nm.
Key,,ords: Quantum well optoelectronic switch (QWOES); Front slope efficiency;
Quantum efficiency
1. INTRODUCTION
Electrical- and optical-induced negative differential resistance (NDR)
switching characteristics in III-V semiconductor devices have found
applications in a variety of areas such as microwave generation and
high frequency oscillation. Ofparticular interest is the development of
S-shaped NDR devices, including metal-insulator-semiconductor [1],
pn junction [2], and delta-doped superlatt
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