ageneralizeddesignprocedurefora.pdfVIP

Progress In Electromagnetics Research B, Vol. 10, 1–19, 2008 A GENERALIZED DESIGN PROCEDURE FOR A MICROWAVE AMPLIFIER: A TYPICAL APPLICATION EXAMPLE F. G¨une¸s an dC. Bilgin Electronics and Communication Engineering Department Yıldız Technical University Be¸sikta¸s, Istanbul, Turkey Abstract—In this work, a generalized procedure is carried out for the design of a microwave amplifier. First of all, the Performance Data Sheets (PDS) resulted from the active device characterization are used as Feasible Design Target Space (FDTS). Employing the PDS, the compatible (Noise F , Input VSWR Vi , Gain GT ) is determined over the predetermined bandwidth B between fmin and fmax operation frequencies with the source ZS and load ZL terminations as the design target. In the design stage, the Simplified Real Frequency Technique (SRFT) is utilized in the scattering-parameter formulation of the front- and back-end matching two-ports to provide the source and load terminations to the transistor, respectively. As an application example, a novel high technology transistor is chosen and the design targets are determined using the PDSs of the device and its front- and back-end matching two-ports are characterized by the scattering- parameters using the novel SRFT for each design target. Furthermore, the performances of the resulted amplifier circuits are analyzed and compared with the simulated results. 1. INTRODUCTION As the electronic industry moves towards higher integration and lower cost, RF and wireless design demands increasingly more “concurrent engineering”, thereby requiring IC designers to have sufficient knowledge of all related disciplines such as microwave theory, communication theory, IC design, wireless standards, multiple access, transceiver architectures, CAD tools. Due to the limited prime power, the low power and/or the low voltage, are among