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Citation
Copyright (to be inserted by thepublisher )
Internal Gettering In Silicon: Experimental And Theoretical Studies
Based On Fast And Slow Diffusing Metals
P.Geranzani, M.Pagani, C.Pello’, G.Borionetti
MEMC Electronic Materials S.p.A.
Viale Gherzi, 31
28100 Novara, Italy
Keywords: internal gettering, gettering modeling, oxygen precipitates, oxygen clusters, lifetime,
iron, nickel
Abstract. An in depth evaluation of internal gettering effectiveness in Si wafers has been run based
on iron and nickel intentional contamination followed by minority carrier recombination centers
measurements. The paper demonstrates the relevance of oxygen clusters density and stability as well
as thermal treatment cooling phase conditions on gettering mechanism activation. A theoretical
model is proposed taking into account both homogeneous and heterogeneous nucleation of metals at
oxygen clusters and surface sites.
Introduction
Evaluation of silicon wafer gettering efficiency is of great importance for practical purposes like
new product or process developments and yield optimization [1,2]. For the same reasons, models of
gettering processes are also receiving increasing attention due to the interest in computer simulation
as a tool for a preliminary evaluation and better understanding of gettering mechanisms as well as
reduction of cost effective experimental trials. This work covers both these aspects of gettering
studies and focuses on internal gettering, that is gettering effects mostly depending on
characteristics and distribution of oxygen clusters.
The paper will investigate gettering behavior in case of two metals, nickel and iron, chosen
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