淀积光刻刻蚀第三讲精要.ppt

# Non_Uniform Grid(0.6um*0.8um) line x loc=0. spac=0.10 line x loc=0.2 spac=0.01 line x loc=0.6 spac=0.01 # line y loc=0.00 spac=0.008 line y loc=0.2 spac=0.01 line y loc=0.5 spac=0.05 line y loc=0.8 spac=0.15 # Initial Silicon Structure with 100 Orientation init silicon c.boron=1.0e14 orientation=100 two.d # Gate Oxidation diffus time=11 temp=925.727 dryo2 press=0.982979 hcl.pc=3 # extract name=Gateoxide thickness material=SiO~2 mat.occno=1 x.val=0.3 # Conformal deposit polysilicon deposit polysilicon thick=0.2 divisions=10 # Poly Etch etch polysilicon left p1.x=0.35 # Oxide Etch etch oxid