GaN及其应用-宽禁带半导体教案.pptVIP

氮化物半导体技术 第三代半导体技术 二、发展趋势 氮化物研究的主要课题 物理问题的研究--原理机制的创新 新的生长技术和机理的研究--方法创新 GaN衬底材料--材料功能创新 短波长激光器 高温大功率电子器件 紫外光探测器 稀磁半导体和自旋电子学 相关技术、材料领域的研究 波长为400nm时，外部量子效率最高由日亚化学工业、美国Cree公司和NECD等公司推动的“21世纪照明工程”的GaN类LED外部量子效率比较。在400nm附近，外部量子效率达到最大值。如果波长超过400nm，外部量子效率就会缓慢降低。如果小于400nm，外部量子效率则会急剧降低 氧化条形结构 限制P型电极面积的大小来改善电流的注入 侧向电流和光限制均较差 光损耗大，激光器效率低 属于增益导引机制。 腔镜面制备的困难 GaN与蓝宝石解理面错开 30度 激光剥离，自然解理镜面 小于5nm * 红光DVD 4.7 Gb 蓝紫光27.0 Gb（提高到5-6倍!!） DVD松下 单面双层50.0 Gb蓝紫光DVD 宽禁带半导体 ? InN High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes High-indium-content InGaN/GaN MQW LED structures were epitaxially grown by MOVPE. With 70% indium in the InGaN well layers, it was found that the photoluminescence (PL) full-width at half maximum (FWHM) is stronger than that in the case of low-indium-content InGaN/GaN MQW LED structures. It was also found that the peak position of electroluminescence (EL) fabricated In0.7Ga0.3N/GaN LED depends strongly on injection current. As injection current increased from 1 mA to 150 mA, it was found that the output color of the In0.7Ga0.3N/GaN LED changed from orange to yellow, to yellowish green, and finally to yellowish white InGaN-Based Single-Chip Multicolor Light-Emitting Diodes A light-emitting diode (LED) driving technique to realize single-chip multicolor LEDs was proposed. The technique utilizes one of the characteristics of InGaN-based visible LEDs, the current-induced spectral blueshift. By applying pulsed current, which had two pulses of different amplitude in a cycle, to an InGaN single-quantum-well green LED, the light of two wavelengths corresponding to bluegreen and green was emitted from the same point, and the emission color of the LED was controlled continuously from bluegreen to green by adjusting only the pulse widths. 二、氮化物的用途 氮化物半导体的主要特点 GaN, AlN, InN 及其合金体系，全部为直接带隙，构成高亮度发光材料。 易于生成多层异质结构，形成MQWs，SLS, 2DEG等结构，有利于器件结构设计。 带隙范围覆盖了整个可见光到远紫外波段，特别是在短波长方面，目前是唯一最佳选择。 结构稳定，耐腐蚀，长寿命 氮化物半导体的主要用途 高亮度紫外光、蓝光、绿光和白光光发射二极管（LE