第三讲太阳电池原理及主要电池介绍分析报告.ppt

* 硅片厚度的发展： 70年代－450～500 ?m， 80年代－400～450?m。 90年代－350～400 ?m。 目前 － 260～300 ?m。 ～2010年 200～260 ?m。 ～2020年 100～200 ?m。 * 中国太阳能市场以及政策- 长期规划中的大型光伏电站分布 * * 作业： 什么是光伏效应？ 简述太阳电池工作原理 名词解释：Voc Isc FF 思考题：简述主要太阳电池材料及特点 * * Higher cell temps = lower output = lower efficiency Efficiency- % of power converted (from absorbed light to electrical energy) and collected The 1st generation of solar cells, (photovoltaic) are comprised of one layer of p-n junction Starting at 6% efficiency – 12% Cannot convert more than 25% of the solar energy into electricity because IR radiation does not have enough energy to separate positive and negative charges in the material Efficiency is improved in 2nd generation photovoltaics by layering p-n junctions. Each layer designed to absorb a successively longer wavelength of light (lower energy) – absorbing more ot the solar spectrum – increasing amount of electrical energy produced At least 30% efficiency 3rd generation- semiconductor that does not rely of p-n junctions (dye sensitive cells, organic polymer cells, quantum dot solar cells) We can use what we have just learned of the VI plane to show how a diode becomes a solar cell when light is introduced. In the so-called dark characteristic at the left, please note that the diode curve occupies only the first and third quadrants of the VI plane – i.e., the power dissipation quadrants. Thus, no matter which direction current happens to be flowing in the diode, power is being taken from the circuit, not being delivered to the circuit. When sunlight is introduced, however, the entire characteristic is translated downward so that, in addition to the first and third quadrants, part of it now also occupies the fourth quadrant – i.e., one of the two power generation quadrants. Thus, when operating in this quadrant, the diode delivers power to the circuit. Here it is no longer called a diode but a solar cell or photovoltaic device (from the Gre