延长存储器使用寿命的研究分析报告.doc

摘 要 在计算机领域飞速发展的当下，存储器部分作为计算机系统中的核心组成部分，对其性能的要求也在不断提高。除了在工艺改良方面所能做出的努力，人们也在不断探索能够找出一种新的材料来使存储器的性能得到大幅度的提高。而铁电薄膜的出现给这一想法带来了希望。由于铁电材料自身所具有的非挥发性，以及用于较高的介电常数等性质，不但非常适宜用作存储器材料，也能够完成较高程度的集成。通过目前已经研制出的FeRAM来看，铁电材料至少可以拥有非挥发性；高速存取；低能耗小尺寸；工作温度范围广；抗辐射损伤能力强等优异的性能。但在铁电材料的应用过程中仍有一些问题尚未解决，其中最严重的就是铁电薄膜存在的极化翻转疲劳现象。于是本文用实验的方式探究铁电薄膜疲劳现象的成因以及影响因素，用以研究解决铁电材料极化翻转疲劳的方法。 关键词：铁电存储器；铁电薄膜；极化翻转疲劳；缺陷 ABSTRACT In the rapid development of computer science at present, memory part as the core elements in the computer system, its performance requirements are also rising. In addition to can make in process improvement efforts, people are constantly exploring performance to find a material to store new has been greatly improved. And the emergence of ferroelectric thin films for this idea brings hope. The non-volatile ferroelectric material has its own, as well as for the high dielectric properties, is very suitable for the memory material, also can achieve a higher degree of integration. By now has developed the FeRAM, ferroelectric materials may at least have non volatile; high speed access; low energy consumption and small size; operating temperature range; resistance to radiation damage ability and excellent. But in the application process of ferroelectric materials still have some problems have not been resolved, polarization switching fatigue phenomenon there is the most serious is the ferroelectric thin films. Causes and the way of ferroelectric thin films fatigue phenomenon and the influence, in order to study the solution of polarization switching of the ferroelectric material fatigue. Key words：FeRAM；Ferroelectric thin films；Polarization switching fatigue；Defect  目 录 1.1存储器件 1 1.1.1存储器件的分类 1 1.1.2铁电存储器 2 1.2铁电存储器的疲劳现象 5 1.3铁电材料 6 1.4 本论文的目的和意义 9 1.5 本论文具体内容安排 10 第二章 PZT薄膜的制备与测试 11 2.1引言 11 2.2样品制备 11 2.3样品表征与测试 15 2.3.1样品表征 15 2.3.2疲劳特性测试 15 2.4本章小结 15 第三章 结果分析与讨论 17 第四章 总结与展望 19 致 谢 20 参考文献 21   第一章 绪论1.1存储器件n位二进制位）作为一个整体存入或取出时，称存储字； 存储体：大量存储单元的集合组成存储体