5-同质LP缓冲层对ZnO薄膜电性能影响的研究 毕业论文.doc

摘 要 随着半导体材料的发展，从最初的第Ⅳ族元素；到第二代的第Ⅲ、Ⅴ族元素，如铝、镓、铟和磷、砷、锑合成的Ⅲ—Ⅴ族化合物；发展到现在以ZnO为代表的第三代半导体材料。ZnO的结构属于纤锌矿，存在c极轴的六方晶系6mm点群。（002）高度定向的多晶薄膜可以达到类似单晶般优良的压电性。 在载玻片上采用低功率磁控溅射法（LP）沉积ZnO同质缓冲层，经过热处理后再在其上制备氧化锌薄膜，系统地研究了在不同制备功率下缓冲层厚度对薄膜电性能的影响。结果表明，在缓冲层上，可在较宽的RF功率范围内（25-550W）制备出（002）定向指数达0.98以上的ZnO多晶薄膜，薄膜的电阻率均在2*108Ω?cm以上。缓冲层，薄膜的均匀性、表面平整度。 关键词 同质缓冲层；（002）定向；热处理；磁控溅射 Abstract With the development of semiconductor material from the first section IV elements; to the second generation Ⅲ, Ⅴ group elements, such as aluminum, gallium, indium and phosphorus, arsenic, antimony synthesis of III - V compound; development to the present ZnO as a representative of the third generation of semiconductor materials. Belong to the wurtzite structure of ZnO, c polar axis of the hexagonal 6mm point group. (002) The highly oriented polycrystalline thin film can be achieved similar to the single crystal as excellent piezoelectric properties. A thin layer deposited on zhe ground slide under low RF power magnetron sputtering was used as a homo-buffer (LP-buffer) for the growth of ZnO films. Under the influences of the RF power, the buffer thickness on the characteristics of the ZnO films were studied. The results showed that, after the insertion of the LP-buffer, the preferential C-oriented ZnO films with the resistivity about 2*108Ω?cm could be obtained in a wide RF power range of 25-550W. With the increase of buffer thickness, the grains ，planeness and the (002) C-orientation improved became uniform. Keywords Homo-buffer;(002) orientation;Li dopant; Heat-treatment; Magnetron sputtering目录 摘 要 I Abstract II 目录 I 第1章 绪论 1 1.1 引言 1 1.2 氧化锌的晶格结构 2 1.3 氧化锌薄膜的应用 3 1.3.1 ZnO薄膜光电性质的应用 4 1.3.2 ZnO薄膜敏感性质上的应用 5 1.3.3 ZnO薄膜压电性质的应用 6 1.4 ZnO薄膜的制备 7 1.4.1 磁控溅射法 7 1.4.2 化学气相沉积法 8 1.5同质缓冲层的研究概况 9 1.6 课题的提出及其主要研究内容 10 1.6.1 课题的提出 10 1.6.2 主要研究内容 11 1.7 本章小结 12 第2章 试验部分 13 2.1 ZnO靶材的制备 13 2.1.1 陶瓷制备工艺简介 13 2.1.2 ZnO陶瓷靶材制备工艺流程 14 2.2 载玻片基材及配套实验仪器的清洗 14 2.2.1 污染物的分类 14 2.2.2 载玻片的清洗 15 2.2.3 烧杯、夹具等仪器的清洗 15 2.3 低功率磁控溅射法（LP）沉积Zn