退火温度对Al诱导多晶硅薄膜晶化过程的影响讲解.docVIP

毕 业 论 文 退火温度对Al诱导多晶硅薄膜 晶化过程的影响 学生姓名 学 号 院 系 数理信息学院 专 业 微电子学 指导教师 完成日期 年月日 退火温度对Al诱导多晶硅薄膜晶化 过程的影响 摘 要 多晶硅薄膜是一种新型的薄膜材料，这种薄膜材料具备晶体硅的电学性质，同时又有非晶硅薄膜设备简单、成本低和大面积制备等优点。本文介绍了多晶硅薄膜晶化的过程及结果，主要的研究内容是退火温度对Al诱导多晶硅薄膜晶化过程的影响。实验是先在普通的玻璃衬上，利用热蒸发台和磁控溅射台先后沉积得到Al和非晶硅薄膜，然后将样品分成五组，选择不同的温度在高温管式炉里进行退火处理。 通过电子显微镜观察样品表面形貌，再通过X射线衍射仪和激光拉曼光谱得到每组样品的XRD光谱以及Raman光谱。在分析薄膜的微结构后，得出以下结论：退火温度对Al诱导多晶硅薄膜晶化过程的影响非常大，在相同退火时间的条件下，退火温度越高，硅薄膜的晶化效果越好，然而当退火温度小于200的时候，硅薄膜颗粒处于非晶态状态，也就是说硅薄膜没有较好晶化，而实验样品在400退火温度的条件下形成的硅晶粒比较大。 关键词 Al诱导晶化；多晶硅薄膜；非晶硅薄膜；X射线衍射；拉曼光谱 Effect of annealing temperature on Al induced crystallization of polycrystalline silicon thin films ABSTRACT Polycrystalline silicon thin film is a kind of new type of thin film materials. It owns characteristics of electrical properties on crystalline silicon and advantages of amorphous silicon thin film device, such as simpleness, low cost and large area . This paper introduces the crystallization process and results of the polycrystalline silicon thin film , and the main research content is about the annealing temperature on the Al that induces effects of polycrystalline silicon thin film crystallization process. The experiment is conducted successively for Al and amorphous silicon thin film by using thermal evaporation and magnetron sputtering deposition on the ordinary glass lining. Then the sample is divided into five groups in the high temperature tube furnace for annealing treatment under different temperatures . After making use of electron microscope to observe samples’ surface pattern, then we use X-ray diffraction and laser Raman spectra to get each group of the XRD spectra as well as the Raman spectra of the sample. The following conclusions come out after analyzing the microstructure of the film: The annealing temperature has a large impact on the crystallization process of inducing polysilicon of Al. Under the conditions of same annealing time, the high