毕业论文（设计）铸造多晶硅晶体生长速率对杂质分布的影响研究.docVIP

铸造多晶硅晶体生长速率对杂质分布的影响研究 摘 要 目前，铸造多晶硅是最主要的光伏材料，其结晶组织、缺陷、和杂质含量显著影响着太阳能电池的转换效率。杂质的浓度和分布是影响光电转换效率的重要因素。由于多晶硅锭的质量好坏主要决定于长晶过程中的固液界面形状及晶体生长速率大小，固液界面形状及晶体生长速率大小对定向凝固的排杂效果起决定作用，一般认为微凸的固液界面更有利于多晶硅杂质和位错的排除。因此深入研究多晶硅生长速率对杂质分布的影响，分析它对多晶硅锭结晶学及电学性能的影响，不仅有利于生长出高成品率的铸造多晶硅锭，而且可以降低铸造多晶硅硅片的制造成本。 本工作利用微波光电导衰减仪（μ-PCD）、二次离子质谱仪（SIMS）The Investigation on the crystal growth rate of Casting polycrystalline silicon influencing on the distribution of impurity ABSTRACT At present,casting polycrystalline silicon is the main PV materil.Its affect the conversion efficiency of solar battery.Impurity concentratio And distribution is the important factor of photoelectric conversion efficiency.because of quality of poolycrystalline silicon ingots is determined by the position of the solid/liquid interface and growth rate of crystal. The shape of solid/liquid interface and growth rate determined the quality of rejecting of impurity. Generally think that small protruding liquid-solid interface is more advantageous to the reject of dislocation and impuritry. So further research about polysilicon growth rate influence on the distribution of the impurity of polycrystalline silicon ingots is necessary. By analysis electrical behaviour of the ingot, not only help us improve the yield of the ingots,but also can reduce the cost of casting polycrystalline silicon. In this thesis, we use Microwavephoto Conductive Decay(μ-PCD, ScanningInfrared Microscopy(IR), Scanning Infrared Microscopy(SIR M) and Four-point Probe Tester to Investigate the distribution of impurity and Minority carrier lifetime of the ingots. In the experim -ents we find that osygen content increases in vetical direction, While carbon distribution is exactly thepposite.We find that low-speed solidification conditions is good to the reject of all the reject of all the metal inpurity,minority carrier lifetime is higher, but the casting cycle is longer. Whle High-speed solidification to the disadvantage of the reject of impurity.and its minority car