磁隧道结论文含时双势垒中隧穿磁电阻的研究.docVIP

磁隧道结论文：含时双势垒中隧穿磁电阻的研究 【中文摘要】隧穿磁电阻效应由于磁电阻效应大、耗能小等优点,在计算机硬盘的读出磁头、磁性随机存储器和各类磁传感器等方面有重要的应用价值.因为科技的进步,电子器件的尺寸在逐渐的缩小,所以介观领域中的电子输运受到了人们的极大关注.本文介绍了隧穿磁电阻效应以及与其相关的理论概念,然后在Slonczwski的自由电子理论模型下,考虑外加微扰交变电场的影响,计算了铁磁体/绝缘体/铁磁体/绝缘体/铁磁体双隧道结中的透射概率、电导和隧穿磁电阻.首先,在铁磁体/绝缘体/铁磁体/绝缘体/铁磁体隧道结中不考虑微扰外场时,利用波函数匹配方法和转移矩阵法,求解出透射系数、电导和隧穿磁电阻,并作图分析.在研究中发现：分子场角度θ=(?)=0时电导有最大值,TMR有最小值；而在θ=(?)=π时电导有最小值,TMR有最大值；TMR随着电子入射能量E的增加先减少后增加,在E=0.25eV附近达有最小值；电子渡越时间随中间铁磁层宽度的增加而迅速增加.其次,考虑微扰交变电场的影响,计算出隧穿磁电阻随时间的变化情况,最后作图分析,得出：随着时间的增加,隧穿电导周期性向上振荡,而隧穿磁电阻周期性向下振荡；在入射电子能量E=0.25eV时,隧穿磁电阻随时间的增加周期性向上振荡,在其它入射电子能量时隧穿磁电阻随时间周期性向下振荡；随着分子场角度的增加,隧穿磁电阻随时间周期性向下振荡的初始位置变高. 【英文摘要】Tunneling magnetic resistance has large magnetoresistance, small energy etc, so it has important application value in playback heads of computer hard disk, and in magnetic RAM and various magnetic sensor etc. Because of the progressive science and technology, and that the size of electronic devices is gradually reduced, the electron transport in mesoscopic fields is concerned.This dissertation introduced the tunneling magnetoresistance and related theories and concept, then calculated transmission probability, conductance and tunneling magnetic resistance of ferromagnetic/insulators/ferromagnetic/insulators/dual tunnel ferromagnetic, based on unbound electrons theoretical model by Slonczwski and external alternating electric field perturbation.First, calculated the transmission coefficient, the conductance and the tunneling magnetic resistance by means of wave function matching method and transfer matrix method, then mapped and analyzed, based on without considering the alternating electric field perturbation in the ferromagnetic/insulators/ferromagnetic/insulators /ferromagnetic tunnel. It was found that:when molecular field angleθ=φ= 0, conductance has maximum value, TMR has minimum value; atθ=φ=π, conductance has minimum value, and TMR has maximum value; when electron energy E increasing, TMR increase after reducing, and TMR has minimum value at E=0.25eV; the e