全球半导体晶体生长真著名商业软件FEMAG--Optimization of Silicon Ingot Quality.docxVIP

全球半导体晶体生长仿真著名商业软件FEMAG Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects F. Loix2*, F. Dupret1,2*, A. de Potter2, R. Rolinsky2, W. Liang2, N. Van den Bogaert2 1CESAME Research Center, Université catholique de Louvain, Batiment EULER, 4 av. Georges Lema?tre, B-1348 Louvain-la-Neuve, Belgium 2FEMAGSoft S.A. Company, 7 Rue André Dumont, Axis Parc, B-1435 Mont-Saint-Guibert, Belgium The growth of Silicon (Si) ingots by the Czochralski (Cz) technique for electronic (IC) applications has been governed for more than 50 years by two, somewhat contradictory, technological objectives. First, the crystal diameter has to be nearly constant and the largest possible according to current market requirements. Second, the product quality has to be perfectly controlled in terms of crystal defects and composition. On the other hand, growing Cz Si crystals for photo-voltaic (PV) applications requires to minimize both the energy consumption and the growth duration without, however, generating a too large content of micro-voids in the crystal. Achieving these goals is by no means easy since increasing the crystal diameter requires a larger melt volume and hence results in a much more complex melt flow regime with complicated heat, momentum and species transport effects, a very sensitive solid-liquid interface shape (with a less uniform thermal gradient), and in general an enhanced dynamic system behavior. A similar enhancement of the system dynamic behavior can result from the use of a high pull rate to increase the growth speed. Therefore, in general, designing the furnace hot zone will require to introduce appropriate heat shields in order to well-control the radiation heat transfer while a satisfactory melt flow pattern can only be obtained for large diameter crystals by the action of transverse or configured magnetic fields. Moreover the selection of optimal process parameters (heater p