脉冲激光沉积(PLD)技术和应用课题.pptVIP

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Ways to deposit thin films Pulsed Laser Deposition Pulsed Laser Deposition Target: metals, semiconductors… Laser: UV, 10 ns pulses Vacuum: Atmospheres to ultrahigh vacuum Film thickness: typically 100-200 nm. Deposition rate: 0.1 nm/pulse Pulsed Laser Deposition Advantages of PLD Exact transfer of complicated materials Flexible, variety, easy to implement Easy to prepare target Epitaxy at low temperature Fast growth rate Disadvantages of PLD Uneven coverage High defect or particulate concentration Not well suited for large-scale film growth Mechanisms and dependence on parameters not well understood Processes in PLD Laser superheats subsurface layer before surface reaches evaporation point Surface breaks apart into large (micron-sized) globule particles when the subsurface expands. Pressure Expulsion Expansion of plume causes sudden drop in pressure just above surface Shock wave pulls droplets of liquid off of surface Exfoliation Thermal shock causes irregularities in surface to break off Surface morphology Previous ablation Particulates are randomly shaped Process parameters substrate temperature the target-substrate distance ambient oxygen pressure and annealing temperature target consistency pulse laser energy laser frequency Characteristic properties of Y2SiO5:Ce thin films grown with PLD E. Coetsee, J.J.Terblans,H.C.Swart, Physica B 404(2009)4431–4435 Opportunities Ultrahigh quality films Circuit writing Isotope Enrichment New Materials Nanoparticle production Opportunities Ultrahigh quality films Circuit writing Isotope Enrichment New Materials Nanoparticle production Opportunities Ultrahigh quality films Circuit writing Isotope Enrichment New Materials Nanoparticle production DARPA MICE Program (U.S. Defense Advanced Research Projects Agency Mesoscopic Integrated Conformal Electronics program) Opportunities Ultrahigh quality films Circuit writing Isotope Enrichment New Materials Nanoparticle production Opportunities Ultrahigh quality films Circuit wri

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