《Capacitive Inter-Chip Data and Power Transfer for 3-D VLSI》.pptVIP

;1.Abstract 2.Introduction 3. SYSTEM OVERVIEW 4. CHARGE-PUMP CIRCUIT 5.RESULTS 6. DISCUSSION AND TECHNOLOGY COMPARISON;Abstract：;INTRODUCTION;SYSTEM OVERVIEW ;;2005 Isolation charge pump fabricated in siliconon sapphire CMOS technology;CHARGE-PUMP CIRCUIT;;;NO substrate parasitics in the SOS CMOS process;Fig. 3 plots the scaling properties for the charge-pump output current as a function of capacitors (pumping stages) and the distance between capacitors’ plates。 The charge pump used in this article provided approximately 100 A of current, as can be seen in Fig. 3.;RESULTS;The top left is at