15-2-4-Optoelectronics答案.ppt

7. The avalanche photodetector APD 雪崩光电极管 Typical APD Typical structure MAPD 台面型APD GAPD 平面保护环型 RAPD 拉通型 MAPD and GAPD, response speed is slow because the carriers’ diffusion can’t be neglected. p p For direct gap materials, one can have the same region for absorption and avalanche processes. substrate Top contact Back contact Typical APD Si-APD only electron injected, low noise, high Ge-APD high noise, InGaAs/InP-APD surface loss is low * * The sensitivity 灵敏度 is determined by the ratio of signal to noise RSN,信噪比 Signal or Noise RSN Sensitivity PIN: no gain