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目录摘要11实验32结果与讨论2.1薄膜的结构与形貌32.2薄膜的电学和光学特性53结论8Effects of Annealing on Properties of ZnO／Cu／ZnO Transparent Conductive Film李文英，钟建，张柯，汪元元，尹桂林，何丹农。LiWen—ying1，ZHONG Jian2，ZHANG Ke2 WANG Yuan—yuan2，YIN Gui一1in2．HE Dan—nong1’2(1上海交通大学材料科学与工程学院，上海200240； 2纳米技术及应用国家工程研究中心，上海200241) (1 School of Materials Science and Engineering．Shanghai Jiao Tong University，Shanghai 200240，China；2 National Engineering Research Center for Nanotechnology，Shanghai 200241，China)摘要：室温下利用磁控溅射制备了ZnO／Cu／ZnO透明导电薄膜，采用X射线衍射(XRD)、原子力显微镜(AFM)、扫描电子显微镜(SEM)、霍尔效应测量仪和紫外一可见分光光度计研究了薄膜的结构、形貌、电学及光学等性能与退火温度之间的关系。结果表明：退火前后薄膜均具有ZnO(002)择优取向，随着退火温度的升高，薄膜的晶化程度、晶粒粒径及粗糙度增加，薄膜电阻率先降低后升高，光学透过率和禁带宽度先升高后降低。150。C下真空退火的ZnO／Cu／ZnO薄膜的性能最佳，最高可见光透光率为90．5％，电阻率为1．28×10-4Q·cIn，载流子浓度为4．10×1021 cm 。关键词：退火；ZnO；Cu；透明导电薄膜中图分类号：TN304；0484 文献标识码：A 文章编号：1001—4381(2015)01—0044—05Abstract：ZnO／Cu／ZnO transparent conductive thin film was prepared by magnetic sputtering deposi—tion at room temperature．The relationships between post—annealing and the structure，morphology， electrical and optical properties of the multilayer film were investigated by X—ray diffraction(XRD)， canning electron microscope(SEM)。Hall effect measurement sys—tem and UV—Vis spectrophotometer．The results indicate that ZnO films have(002)preferential ori—entation before and after annealing．With the increase of annealing temperature，the crystallization， grain size and surface roughness increase．The resistivity decreases at first and then increases，while the optical transmittance and band gap energy increase at first and then decrease．ZnO／Cu／ZnO film annealed at 1 50℃has the best performance with the highest transmittance of 90．5％in the visible range，a resistivity of 1．28×10—4n·cm and a carrier concentration of 4．10×1021 cm一3．Key words：annealing；ZnO；Cu；transparent conductive filmZn0是一种Ⅱ一Ⅵ族宽禁带半导体，在可见光范围内具有高的透过率[1’2]。作为一种透明导电氧化物， ZnO在平板显示器[3]、太阳能电池[4]、有机发光二极管[5J、液晶显示器L6’71等领域有着广泛的应用前景。透明导电薄膜要求在可见光范围内具有高透过率和低电阻率，然而，纯Zn0具有高的电阻率，因此，有必要引入一种方法来降低其电阻率。半导体一金属一半导体 (D-M—D)结构将金属与半导体相结合，中