15-2-4-Optoelectronics研究.ppt

7. The avalanche photodetector (APD 雪崩光电极管) Typical APD Typical structure MAPD (台面型APD) GAPD (平面保护环型) RAPD (拉通型 ) MAPD and GAPD, response speed is slow because the carriers’ diffusion can’t be neglected. p p For direct gap materials, one can have the same region for absorption and avalanche processes. substrate Top contact Back contact Typical APD Si-APD only electron injected, low noise, high Ge-APD high noise, InGaAs/InP-APD (surface loss is low ) * * The sensitivity (灵敏度)is determined by the ratio of signal to noise (RSN,信噪比) Signal or Noise RSN