cse477-8capacitance.pptVIP

CSE477VLSI Digital CircuitsFall 2003 Lecture 08: MOS Wire Capacitances Mary Jane Irwin ( /~mji ) /~cg477 [Adapted from Rabaey’s Digital Integrated Circuits, Second Edition, ?2003 J. Rabaey, A. Chandrakasan, B. Nikolic] Review: Delay Definitions CMOS Inverter: Dynamic Sources of Capacitance Intrinsic MOS Capacitances Structure capacitances Channel capacitances Diffusion capacitances from the depletion regions of the reverse-biased pn-junctions MOS Structure Capacitances MOS Channel Capacitances Review: Summary of MOS Operating Regions Cutoff (really subthreshold) VGS ? VT Exponential in VGS with linear VDS dependence ID = IS e (qVGS/nkT) (1 - e -(qVDS/kT) ) (1 - ? VDS) where n ? 1 Strong Inversion VGS VT Linear (Resistive) VDS VDSAT = VGS - VT ID = k’ W/L [(VGS – VT)VDS – VDS2/2] (1+?VDS) ?(VDS) Saturated (Constant Current) VDS ? VDSAT = VGS - VT IDSat = k’ W/L [(VGS – VT)VDSAT – VDSAT2/2] (1+?VDS) ?(VDS) Average Distribution of Channel Capacitance MOS Diffusion Capacitances Source Junction View Review: Reverse Bias Diode All diodes in MOS digital circuits are reverse biased; the dynamic response of the diode is determined by depletion-region charge or junction capacitance Cj = Cj0/((1 – VD)/?0)m where Cj0 is the capacitance under zero-bias conditions (a function of physical parameters), ?0 is the built-in potential (a function of physical parameters and temperature) and m is the grading coefficient m = ? for an abrupt junction (transition from n to p-material is instantaneous) m = 1/3 for a linear (or graded) junction (transition is gradual) Nonlinear dependence (that decreases with increasing reverse bias) Reverse-Bias Diode Junction Capacitance Transistor Capacitance Values for 0.25? Transistor Capacitance Values for 0.25? Review: Sources of Capacitance Gate-Drain Capacitance: The Miller Effect Miller Effect: A capacitor experiencing identical but opposite