电力电子与电力子传动技术答案.docVIP

问答题 什么是全控型器件？ 答：通过控制信号既可以控制其导通，又可以控制其关断的电力电子器件被称为全控型器件，又称为自关断器件；这类器件很多，门极可关断晶闸管（Gate-Turn-Off Thyristor—GTO），电力场效应晶体管（Power MOSFET），绝缘栅双极晶体管（Insulate-Gate Bipolar Transistor—IGBT）均属于此类。安全工作区是指功率半导体器件（例如双极性晶体管、场效应管、晶闸管以及绝缘栅双极晶体管）能够按照预期正常工作而不会造成损坏时的电压电流等条件的范围。在半导体器件产品的手册或datasheet里，安全工作区通常以图像的形式标明，以晶体管为例，安全工作区标示图的横坐标是 VCE（集电极-发射极电压）、纵坐标是 ICE（集电极-发射极电流），而安全工作区的范围即为图中曲线与坐标轴所包围的区域。 因为功率MOSFET的电流具有负的温度系数，则当把许多MOSFET并联起来之后，一旦其中有某一个MOSFET管的电流增大时，就会引起温度升高，使得该MOSFET的电流又降低下来，即具有自限流效应，所以不会导致整个器件损坏。实际上，功率MOSFET本身就是由成千上万个小的MOSFET并联构成的，所以才具有很大的电流容量。 GTR是双极型器件，电流的温度系数为正，因此并联起来之后就容易发生热-电击穿。 设计IGBT直流Buck斩波电路。 画出主电路电路图； 画出输出电压波形； 写出输出电压表达式。 答： 设计VDMOS单相桥式电压型逆变器。 画出“H桥”主电路电路图； 选择IC基极驱动电路（要求直流电源对地浮动）； 画出一个串联桥臂IC基极驱动电路与VDMOS器件的连接电路。 设计IGBT交-流-交三相电压型逆变器。 画出IGBT主电路电路图； 画出180°导电型三相器件导通波形； 写出器件导通顺序。 答： grass-roots party and members team construction, anti-corruption construction, thought political work, group mission work, 　　For the development of various undertakings in our team played a political role. A level newly promoted party building, and conscientiously implement the principle of democratic centralism, in accordance with the collective leadership, democratic centralism, individual consultation, decided to principles of procedure decision, where the triple a through collective discussion and decision. Convene a special democratic meeting on time. Team members closely around economic development, structural adjustment, livelihood projects and the partys construction through grassroots, United items, visit the staff activities. In accordance with the selection and appointment of party and Government leading cadres under the regulations of work principles and procedures for selecting and appointing cadres, and 15 year-round promotion and adjustment of the middle-level cadres. The cadre supervision work carried out policies focused on educational activities, the Party Committee team carefully studied the relevant documents, given a test, writing a learning experience. Org