陈苑平194-195-B45.docVIP

Comment The results of this example show that Na Nd;therefore the assumption of a one-sided junction was valid. EX5.6 The experimentally measured junction capacitance of a one-sided p+n silicon junction biased at VR 4V at T 300K is C 1.10pF. The built-in potential barrier is found to be Vbi 0.782V. The cross-sectional area is A 10-4cm2. Find the doping concentrations in the junction. TEST YOUR UNDERSTANDING TYU5.3 The maximum electric field in a reverse-biased GaAs pn junction at T 300K is to be︱Emax︱ 2.5×105V/cm. The doping concentrations are Nd 5×1015 cm-3 and Na 8×1015 cm-3.Deterimine the reverse_bias voltage that will produce this maximun electric field. TYU5.4 The experimentally measured junction capacitance at T 300K of a one_sided silicon p+njunction biased at VR 3V is C 1.25pF.The built_in porential barrier is found to be Vbi 0.775V.The cross _sectional area of the junction is A 10-4cm2.Find the doping concentrations. ︱METAL_SEMICONDUCTOR CONTACT_RECTIFYING JUNCTION Objective:Analyze the metal-semiconductor rectifying junction. It has long been known that rectifying contact can be achieved by pressing a sharp wire against selenium.A more reliable contact can be formed by depositing a metal, such as a aluminum,onto the surface of a semiconductor. This type of junction is commonly known as a Schottky barrier junction, or just a Schottky junction. The Schottky Barrier In this section,we will consider the metal-semiconductor rectifying contact, or Schottky barrier junction,under zero bias.In most cases,the rectifying contacts are matal on n_ype semiconductors; for this reason,we will concentrate on this type of contact. The ideal energy_band diagram for a particular metal and n_type semiconductor before making contact is shown in Figure 5.13a,The vacuum level is used as a reference level.The parameter Φm is the metal work function measured in volts , Φs is the semiconductor work function,and χ is known as the electron affinity.The work functions of v