MagneticDataStorages.ppt

Magnetic Data Storage (1) Magnetic recording (a) General (longitudinal recording) (b) Thermal stability (c) Advantage Media Oriented longitudinal media Anti-ferromagnetic coupling media Perpendicular recording Pattern media and nano-particle media High Ku medium (HAMR) (2) Magneto-optical recording (3) MRAM (STT RAM) and Flash disc (4) RRAM and PRAM (Random Access Memory) (5) Optical storage and other memory PtCoCrB films Thermal Stability A perfect orientation (large Ku) carries out: (1) a low media noise (2) a high signal level (3) a smaller transition parameter (4) a narrower switching field distribution OR = Mr / Mr per 2.5 for current L media mechanically texturing metal disk substrate anisotropic etching of the substrate directional deposition of the media Interlayer antiferromagnetic coupling media hybrid recording Magneto-optical Recording High-density MRAM Fig. 2b STT-RAM cell. By eliminating the write word line, bypass line and cladding, a STT-RAM cell is considerably smaller than a conventional MRAM cell. Fig. 2c Total required current in STT-RAM continues to scale lower with increasingly smaller geometries. Conversely, conventional MRAM switching current increases with smaller geometries. spin polarization along the axis parallel to the vector ML of local ferromagnetic polarization in will be present in the electrons impinging on MR. S1,2 = (Ieg/c)S1,2 x (S1 x S2) g = [ -4+(1+p)3(3+S1·S2)/4p3/2] (J.C.Slonczwski 3M 159(1996)L1) (C.Heide et al., PRB 63(2001) 064424). Fig. 1. Plan-view and side-view scanning micrographs of a and b arrays of Co circular rings, c NiFe/FeMn elliptical rings, d NiFe/Cu/Co elliptical rings, and e and f NiFe/Cu/Co pseudo-spin-valve elliptical ring device with six nonmagnetic contact wires. NANORING for MRAM Nanoring for MRAM We have achieved nearly 100% vortex reversal in the asymmetric nanorings, while the symmetric nanorings can ac