双束型聚焦离子束 .docVIP

設備名稱Equipment 雙束型聚焦離子束 Dual-Beam Focused Ion Beam; DB-FIB 設備廠商/型號Vendor/Type FEI Nova-200 NanoLab Compatible 美商飛昱科技股有限公司台灣分公司 規格 Specifications 電子束規格： 解析度 ≦ 1.5 nm @ 30 KV SE ≦ 2.5 nm @ 1 KV SE 加速電壓： 0.2 ~ 30 KV 電子槍型態： 熱場發射式電子槍 離子束規格： 解析度：7 nm 加速電壓：0.2~30 KV 離電子槍型態：液態金屬鎵 ： Axis 5-axis motorized ：PtC 加速蝕刻氣體：XeF2I2 試片大小：Diameter50 mm，height≦5 mm TEM試片取出設備：n-situ lift-out system by W probe Ex-situ lift-out system by optical microscope X光能量分散光譜儀規格： Detector: ≧50 mm2 Silicon Drift Detector MnKα Resolution: ≦ 129 eVE-beam Specification: Resolution: ≦ 1.5 nm @ 30 KV SE ; ≦ 2.5 nm @ 1 KV SE Acceleration Voltage: 0.2~30 KV Electron Source: Thermal Field Emission Ion Beam Specification Resolution: 7 nm guaranteed Acceleration Voltage: 0.2~30 KV Ion Source Type: Gallium liquid metal Stage: Axis 5-axis motorized Deposition Gas: Pt, C Enhanced Etch Gas: XeF2 , I2 Sample Size: Diameterψ50 mm, height≦5 mm TEM Sample Lift-Out System: In-situ lift-out system by W probe Ex-situ lift-out system by optical microscope EDS Specification Detector: ≧50 mm2 Silicon Drift Detector MnKα Resolution: ≦ 129 eV 功能 Qualitative and Quantitative Analysis of Elemental Composition Functions Focused Ion Beam FIB systems utilize a finely focused beam of gallium ions operated at low-beam currents for imaging and at high-beam currents for site-specific milling. The generated secondary electrons or ions are collected to form an image of the surface of the sample. The ion beam allows the milling of small holes in the sample at well localized sites, so that cross-sectional images of the structure can be obtained or that modifications in the structures can be made. The applications of FIB include : Precise cutting: min CD is 20nm. Selective deposition: conductive materials can be deposited by ion-beam induced decomposition of organic metallic molecules on the sample surface. The organ metallic species is introduced near the work surface by use of a fine nozzle which connects to a ga