3.2MOS器件瞬态和无源器件范例.pptVIP

* 减小连线RC延迟的措施 合理的连线设计 优化的按比例缩小 多层互连技术 采用新的低阻连线材料 采用新的低k介质材料 * 铜互连和低k介质 本节总结 * MOS瞬态特性 集成电路中的电阻和电容 互连线 * A silicide is a compound material formed using silicon and a refractory metal to create a highly conductive material that can withstand high-temperature process steps without melting. WSi2 has a resistitivity of 130 microohms-cm Similar techniques are used to reduce the source and drain resistance of the transistor * From the Intel generations, its clear that the wires get closer together, but the vertical dimensions do not shrink proportionally, which increases capacitance. In