3.2s红外椭圆偏振测试技术范例.pptVIP

* * * * * * * Arsen doped Silicon wafers Drude Model: Plasma frequency: 1746 cm-1 Damping:359 cm-1 Carrier concentration: 8.8 x 10+18 / cm3 Mobility 100 cm2/Vs Carrier concentration and profile Si substrate Epi-Silicon Interface Carrier concentration and profile P - Dotierungsprofils in Si solar cells Carrier concentration and profile Sample 1 Sample 2 The IR ellipsometry is a powerful analysis method. It is especially suited for thin organic and inorganic films. There are applications in quite different fields. The combination of ellipsometer optics with commercial FT-IR is a big benefit o