半导体掺杂学习课件.pptVIP

Diffussion Diffusion principles Characteristic of Diffusion Isotropic process Can’t independently control dopant profile and dopant concentration Replaced by ion implantation after its introduction in mid-1970s. First used to dope semiconductor Performed in high temperature furnace Using silicon dioxide mask Still used for dopant drive-in RD on ultra shallow junction formation. Mathematics of Diffusion Fick’s first law diffusion equation Fick’s second law(When D is a constant) * * * Semiconductor Doping Zheng Han Zhongyang Liu Zejia Zhao Shanghang Chen Yan Xu * Introduction Diffussion