专业英语620100414.pptVIP

专业英语-第六讲 李聪 2010-04-14 cong.li@mail.xidian.edu.cn Translation Breakdown voltage VB depends on the doping density of a pn junction, in particular on the doping of the more lightly doped side of the junction. Fig. 8.7 shows a plot of breakdown voltage for Si diodes of different doping. It indicates the general value of the quantities, but does not account for the grading of the junction, the doping of the more heavily doped side, nor the distinction between a planar and a spherical junction. The mechanism of breakdown for p-n junctions with breakdown voltages less than about 4Eg/e is due to the tunneling effect. For junctions with breakdown voltages in excess of 6 Eg/e, the mechanism is caused by avalanche multiplication. At voltages between (4~6) Eg/e, the breakdown is due to a mixture of both avalanche and tunneling. Although not large, the temperature variation of the two types of breakdown is of opposite sign. For breakdown voltages in the range of about 5~6 V for a Silicon diode, both avalanche- and tunnel-breakdown can occur simultaneously so that the net temperature variation is very slight. This characteristic is useful for establishing a voltage reference in some integrated circuits. Vocabulary Breakdown voltage：击穿电压 Diodes：二极管 Spherical junction：球面结 Mechanism：机理 Tunneling breakdown：隧道击穿 Avalanche multiplication：雪崩倍增 Voltage reference ：电压基准 Listen then answer What is breakdown voltage? Try to describe the tunneling process of electrons in a highly doped junction. Where does avalanche breakdown happen? What is the reason why the breakdown voltage due to the tunneling effect has a negative temperature coefficient? Part 1 In the ideal pn junction, a reverse-bias voltage will result in a small reverse-bias current through the device. However, the reverse-bias voltage may not increase without limit; at some particular voltage, the reverse-bias current will increase rapidly. The applied voltage at this point is called the breakdown voltage. Part 2 Two physical m