Dual ate flow.pptVIP

Dual-gate polycide process Flow * 绑禽校渐获涕澈菠执孟钾谣妨铬士豪讳俐匡朋伤杉殊洋肚国岛秩坝绿惺葵Dual gate flowDual gate flow N well N well L05 – To define Nwell (PMOS) Nwell implant : P+1.30E13/cm2, 490KeV, 0 tilt Punch through prevention implant : P+5.00E12/cm2, 180KeV, 7 tilt Vt adjust implant : BF2+5.30E12/cm2, 080KeV, 7 tilt Post Dielectric PRS – Plasma resist strip Polymer removal : SPM 20/10 Nwell implant Vt adjust implant Punch through implant Resist Resist 5V for I/O 3.3V for internal circuit 鄂呕近嚎豁若鞠脆杭悬零奔纽锐谷郁佬挫冕兄艇徽趾鹏鹏校鬼吞夜魏酒丑Dual gate flowDual gate flow N well N well P well L15 Mask - to define P field (NMOS)