2 Semiconductors and P-N Junctions分析.ppt

* 3. Transient 突变状态 If the applied voltage changes rapidly, there will be a short delay before the solar cell responds. 当施加的电压迅速改变时，太阳能电池对变化的响应将会出现延迟。 As solar cells are not used for high speed operation there are few extra transient effects that need to be taken into account. 鉴于太阳能电池并不是高速运转领域使用的电子器件，在这里将不对突变效应多加描述。 §2.5 P-N Junction: Bias of P-n Junctions §2.5 P-N结: P-n结的偏置 * Diodes under Forward Bias 正向偏压下的二极管 Forward bias refers to the application of voltage across the device such that the electric field at the junction is reduced. 正向偏压（也叫正向偏置）指的是在器件两边施加电压，以使得pn结的内建电场减小。 By applying a positive voltage to the?p-type material and a negative voltage to the?n-type material, an electric field with opposite direction to that in the depletion region is applied across the device.? 即在p型半导体加正极电压而在n型半导体加负极电压，于是，一个穿过器件方向与内建电场相反的电场便建立起来了。 Since the resistivity of the depletion region is much higher than that in the remainder of the device (due to the limited number of carriers in the depletion region), nearly all of the applied electric field is dropped across the depletion region. 因为耗尽区的电阻要比器件中其他区域的电阻要大得多（由于耗尽区的载流子很少的缘故），所以几乎所有的外加电压都施加在了耗尽区上。 §2.5 P-N Junction: Bias of P-n Junctions §2.5 P-N结: P-n结的偏置 * The net electric field is the difference between the existing field in the depletion region and the applied field (for realistic devices, the built-in field is always larger than the applied field), thus reducing the net electric field in the depletion region. 净电场是耗散区电场和偏置电场的差值（对于实际的半导体器件，内建电场的电压总是要比外加电场的高），从而导致耗尽区净电场减小。 Reducing the electric field disturbs the equilibrium existing at the junction, reducing the barrier to the diffusion of carriers from one side of the junction to the other and increasing the diffusion current. 而电场的减小将破坏pn结的平衡，即减小了对载流子从pn结的一边到另一边的扩散运动的阻碍，增大扩散电流。 While the diffusion current increases, the drift current remains essentially unchanged since it depends on the number of carriers generated within a diffusion length of the depletion reg