用CV法研究锗硅量子阱结构的电学性质.docVIP

用C-V法研究锗硅量子阱结构的电学性质 姓名：程佩红 指导教师：黄仕华 摘 要：基于不同偏压范围内解析求解泊松方程，得到单量子阱结构电容-电压(C-V)特性的理论表达式。并采用迭代法数值求解泊松方程得到价带结构图及其随外加电压变化的规律，进而模拟得到锗硅量子阱结构在不同偏压下的载流子浓度分布和C-V特性曲线。继而讨论不同量子阱结构参数对C-V特性曲线的影响。 关键词：锗硅量子阱;C-V法;迭代法 Research on electrical properties of Si/Ge/Si quantum-well structures by C-V profiling Name: cheng peihong Director: huang shihua Abstract: The theoretical expressions of the capacitance-voltage (C-V) characteristics of a single quantum well are derived in a different bias voltage regions based on analytically solving analytically Poisson’s equation. Moreover, based on numerically solving Poisson