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Concerning the size of the CMOS technology The keyword：Art changes; Manufacturing defects; The transient error of scale;CMOS In this paper：Methodologies for Adaptation to Process Variations, Manufacturing Defects, and Transient Errors in Scaled CMOS Abstract VLSI technology scaling has spurred a rapid growth in the semiconductor industry. With CMOS device dimensions falling below 100 nm, achieving higher performance and packing more complex functionalities into digital integrated circuits have become easier. However, the scaling trend poses new challenges to design and process engineers. Such challenges include larger process parameter variations and the consequent parametric yield loss, ensuring the reliability of deep sub-micron technologies under soft errors, and reliably fabricating billions of devices on a die. The objective of my research has been to develop circuit and system level techniques to address process variations, transient errors, and the reliability concerns in deeply scaled CMOS technologies. The proposed techniques can be divided into three parts, highlighted in the next three sections. The first part addresses the issues related to process variations and proposes techniques to reduce the variation effects on power and performance. The second part proposes a novel low-overhead defect-tolerant approach for CMOS designs capable of efficiently recovering from dozens of defects. The third section deals with the transient errors and techniques to reduce the effect of transient errors with minimum hardware or computational overhead. 1. Variation-Tolerant Design With the increase of process parameter variations in CMOS technologies due to the processing and masking limitations, power and performance variations become major concerns of circuit designers. Techniques such as the use of forward/reverse body bias and voltage scaling are commonly used to bring down the delay and power consumption specifications in the acceptable range. Variation