ppt课件-rochesterinstituteoftechnologymicroelectronicengineering.pptVIP

ROCHESTER INSTITUTE OF TECHNOLOGYMICROELECTRONIC ENGINEERING RIT METAL GATE PMOS PROCESS STARTING WAFER N-TYPE, 5 OHM-CM ID01 - IDENTIFY WAFER (SCRIBE WAFER)DE01 - FOUR POINT PROBE RCA CLEAN RCA CLEAN GROW 5000 ? OXIDE WET OXIDE GROWTH CHART 5000 ? OXIDE GROWTH 5000 ? OXIDE GROWTH USING BRUCE FURNACE OXIDE COLOR VERSUS THICKNESS TABLE REFLECTANCE SPECTROMETERNANOSPEC FILM THICKNESS MEASUREMENT STEP ETCH APPARATUS ETCH STEPS IN OXIDE ON C1 COAT WITH PHOTORESIST PHOTORESIST PROCESSING SVG WAFERTRAC EXPOSE WITH LEVEL ONE DIFFUSION EXPOSURE, GCA 6700 G-LINE STEPPER ETCH OXIDE ASH RESIST ASH RE