pspic二级管参数总结.docx

? 查看文章?OrCADPSpice DIODE model parameter2010-07-15 22:311.从OrCADPSpice help文档：2.国外网站的相关介绍：SPICE Diode Model Parametersnameparameterunitsdefaultexamplearea1ISsaturation currentA1.0e-141.0e-14*2RSohmicresistancOhm010*3Nemission coefficient-11.04TTtransit-timesec00.1ns5CJOzero-bias junction capacitanceF02pF*6VJjunction potentialV10.67Mgrading coefficient-0.50.58EGband-gap energyeV1.111.11 Si9XTIsaturation-current temp.exp-3.03.0 pn2.0 Schottky10KFflicker noise coefficient-011AFflicker noise exponent-112FCcoefficient for forward-bias depletion capacitance formula-0.513BVreverse breakdown voltageVinfinite40.014IBVcurrent at breakdown voltageV1.0e-315TNOMparameter measurement temperaturedeg C2750The DC characteristics of the diode are determined by the parameters IS, N, and the ohmic resistance RS. Charge storage effects are modeled by a transit time, TT, and a nonlinear depletion layer capacitance which is determined by the parameters CJO, VJ, and M. The temperature dependence of the saturation current is defined by the parameters EG, the band gap energy and XTI, the saturation current temperature exponent. The nominal temperature at which these parameters were measured is TNOM, which defaults to the circuit-wide value specified on the .OPTIONS control line. Reverse breakdown is modeled by an exponential increase in the reverse diode current and is determined by the parameters BV and IBV (both of which are positive numbers).3. 国外网站关于PSpice 其它模型的参数介绍：如（三极管，达林顿管，场效应管，二极管）Spice modelsIntroductionThe MOD model fileThe ZMODELS.LIB library fileModel parameters and limitationsBipolarsDarlingtonsMOSFETsDiodesFurther informationIntroductionZetex have created Spice models for a range of semiconductor components. Models included are Schottky and varicap, high-performance bipolar (high current, low VCE(sat)), higher voltage bipolar, bipolar Darlington and MOSFET transistors. This range is continuously under review as new products are introduced and retrospective models are generated