《射频论文.docVIP

关于RFIC技术现状和发展 综述 Xxx 【摘要】RFIC）不断朝着高性能、高集成度、低功耗和低成本方向发展。CMOS 工艺有着先天的优势：高集成度(与基带、数字信号处理模块工艺兼容)、低成本，而且CMOS 随着特征尺寸的缩小，射频性能不断提高，高精度的射频器件模型及RFIC 设计成为当前的研究热点。 近十年来，射频无线移动通信技术的发展显得尤为迅猛。其中起决定作用之一的技术就是RFIC技术。随着第三代移动通信体制的开始，对新一代无线通信射频集成电路（RFIC）的性能、材料和工艺等都提出了新的技术要求。本文总结了无线通信移动终端RFIC的发展历程和现状，对关键技术进行了探讨,，最后展望了未来的发展前景。 【关键词】Status and development of technology on RFIC Overview Tao Wen 200808030324 Beijing Union University Institute of information Department of Communication Engineering 【Abstract】Wireless communication technology driven the rapid development of information industry whole development, as wireless transmission equipment core device of radio frequency integrated circuit ( RFIC ) toward high performance, high integration, low power consumption and low cost development. CMOS technology has advantage of high integration degree: ( with a baseband, digital signal processing module processes compatible ), low cost, and CMOS as the feature size shrinks, RF continuously improve performance, high precision of the RF device model and RFIC design has become a research hotspot. Come nearly ten years, wireless mobile communication technology development is swift and violent. Which plays a decisive role in one of the technology is RFIC technology. With the third generation mobile communication system to start, on a new generation of wireless communication RF integrated circuit ( RFIC ) performance, materials and process are put forward new requirements. This article summarizes the wireless communication mobile terminal RFIC development course and the present situation, the key technologies are discussed, finally, forecasts the future development foreground. 【Key words】 radio frequency integrated circuit, CMOS, development, current situation, technology, material  引言： 射频集成电路(RF IC，radio frequency integrated circuits)在近十年内得到广泛重视，并在无线通信领域取得快速发展。如今，基带和中频带电路已经完全可以用CMOS工艺集成，但在射频收发端还有一定的困难。由于CMOS的低成本和高集成度，CMOS集成电路在无线通信领域1 GHz到2 GHz频段受到关注，也是目前单片集成研究的热点。射频技术在当今各个领域得到广泛应用，如：蜂窝式个人通信网(