芯片前段制程流程解析.ppt

制 程1 (Process 1:wafer process) ●晶片下线 (Epi wafer product) 芯片尺寸确定、电流扩散及打线电极制作 The determination of the chip’s size,current spreading and the electrode pad of the wire bonding. ●化学清洗（Cleaning） 用化学药品对晶片进行有机物和其它颗粒的去除，以及有些膜层的化学腐蚀。 Removing the organic and contamination from the chip by using organic solvent and acid,and thin film chemical etching . ●黄光光刻制程（Photolithography) 利用光刻胶的特性把图形转移到晶片上 Transfering the pattern to the wafer by using the photoresist . ●蒸镀刻蚀制程（Evaporation，Dry etching) 在外延片上蒸镀金属和ITO薄膜； Metal and ITO film is deposited on the wafer Process 1:wafer process P-N Junction Mesa Etch ITO (TCL for P-GaN ohmic) Bond Pad Passivation P-N Junction Mesa Etch 機台設備: * * 上光刻胶 PR coating 黃光蝕刻 photolithography etching 乾蝕刻 ICP mesa 去光刻胶PR removing 爐管合金 metal alloy 氧化铟锡蒸鍍 ITO deposition ITO蝕刻 ITO etching P-N电极光刻 P-N metal photolithography P-N电极蒸鍍 P-N metal deposition 剥离 Lift off 二氧化硅蒸鍍 SiO2 deposition SiO2黃光蝕刻 sio2 photolithography etching 打线测试 Bond test 抽点 sampling Dry Etch PR Remove p-GaN n-GaN Sapphire(400 μm) 1 PR coating PhotoLithography TCL Pad SiO2 PR 2 3 4 5 ITO . deposition 6 PR coating 7 Sio2 Mask TCL Pad SiO2 PR PhotoLithography 8 ITO etch 9 PR remove 10 PR coating 11 Pad deposition 12 PhotoLithography 13 SiO2 deposition . 14 PR coating 15 PhotoyLithograph 16 SiO2 etch 17 PR remove 18 p-GaN n-GaN Sapphire(400 μm) 1 PR coatin PhotoLithography Dry Etch PR Remove ITO . deposition 6 PR coating 7 PhotoLithography 8 ITO etch 9 PR remove 10 PR coating 11 Pad deposition 12 PhotoLithography 13 SiO2 deposition . 14 SiO2 deposition . 14 PhotoyLithograph 16 SiO2 etch 17 PR remove 18 等离子清洗机plasma 曝光机 Exposure Machine 甩乾機 spin dry 刻蚀机 ICP-RIE 蒸镀机 Evaporator 薄膜沉积设备