Chaptr 2 Solid-State Electronics.pptVIP

Microelectronic Circuit Design Chapter 2Solid-State Electronics Microelectronic Circuit Design Richard C. JaegerTravis N. Blalock Chapter Goals Explore semiconductors and discover how engineers control semiconductor properties to build electronic devices. Characterize resistivity of insulators, semiconductors, and conductors. Develop covalent bond and energy band models for semiconductors. Understand band gap energy and intrinsic carrier concentration. Explore the behavior of electrons and holes in semiconductors. Discuss acceptor and donor impurities in semiconductors. Learn to control the electron and hole populations using impurity doping. Understand drift and diffusion currents in semiconductors. Explore low-field mobility and velocity saturation. Discuss the dependence of mobility on doping level. The Inventors of the Integrated Circuit The Kilby Integrated Circuit Solid-State Electronic Materials Electronic materials fall into three categories: Insulators Resistivity (?) 105 ?-cm Semiconductors 10-3 ? 105 ?-cm Conductors ? 10-3 ?-cm Elemental semiconductors are formed from a single type of atom Compound semiconductors are formed from combinations of column III and V elements or columns II and VI. Germanium was used in many early devices. Silicon quickly replaced silicon due to its higher bandgap energy, lower cost, and is easily oxidized to form silicon-dioxide insulating layers. Semiconductor Materials (cont.) Covalent Bond Model Silicon Covalent Bond Model (cont.) Intrinsic Carrier Concentration The density of carriers in a semiconductor as a function of temperature and material properties is: EG = semiconductor bandgap energy in eV (electron volts) k = Boltzmann’s constant, 8.62 x 10-5 eV/K T = absolute temperature, K B = material-dependent parameter, 1.08 x 1031 K-3 cm-6 for Si Bandgap energy is the minimum energy needed to free an electron by breaking a covalent bond in the semiconductor crystal. Intrinsic Carrier Concentration (con