indiumandaluminium-dopedznothinfilmsdepositedonto.pptVIP

* * * * * * * * * * * * * * * * * * * * * * * * Indium and aluminium-doped ZnO thin films deposited onto FTO substrates: nanostructure, optical, photoluminescence and electrical properties J Sol-Gel Sci Technol (2010) 55:335–342 M. Benhalilibaa ? C. E. Benouisa ? M. S. Aidab ?F. Yakuphanoglu c? A. Sanchez Juarezd 指導教授：林克默 博士 報告學生：郭俊廷 報告日期：99/8/30 a Physics Department, Sciences Faculty, USTOMB University, BP1505 Oran, Algeria b Thin Films Plasma Lab, Physics Department, Ment. University, 25000 Constantine, Algeria c Physics Department, Faculty of Sciences and Arts, Firat University, 23119 Elazig, Turkey d Centro de Investigacion en Energia -UNAM, Temixco,Morelos 62580, Mexico * Outline Introduction Experimental detail Results and discussions Conclusions * Introduction Zinc oxide (ZnO) is one of the most multifunctional semiconductor material used in different areas for the fabrication of optoelectronic devices operating in the blue and ultraviolet (UV) region, owing to its direct wide band gap (3.37 eV) at room temperature and large exciton binding energy (60 meV)[1]. The conditions of deposition and the choice of the substrate are important for the growth of the films. The substrate chosen must present a difference in matching lattice less than 3% to have good growth of the crystal on the substrate[6, 7]. * Various depositions methods have been employed for the growth including, laser deposition[11], sol–gel[12, 13], electrodeposition[14]. In the present study, undoped, Al- and In-doped ZnO thin films were prepared by ultrasonic spray pyrolysis onto FTO. The structural, electrical and optical characterization of ZnO films were investigated for a better understanding of its physical properties. * Experimental detail The precursor compound used was zinc acetate dihydrated, Zn (CH3COO)2(H2O)2 salt (0.1 M)[10]. Doping sources were aluminum nitrate nonahydrated, (Al (NO3)3?9H2O), and indium (III) chloride, InCl3. Both, precursor and doping compounds were dissolved in m