Thermal Stress in MEMS Structures Nelson Research, 在MEMS结构热应力研究尼尔森.pptVIP

Nelson Research, Inc. 2142 – N. 88th St. Seattle, WA. 98103 USA 206-498-9447 Craigmail @ Thermally Induced Stress in a Glass-Silicon Bonded MEMS Micro-Structure A Finite Element Analysis ( FEA ) using flexPDE Craig E. Nelson - Consultant Engineer The purpose of this numerical experiment is to learn about the field distribution of stress and strain in a MEMS microstructure. This knowledge helps the engineer to better understand the stress on a bond line as will occur when anodic bonding of glass and silicon is attempted. In this model, a high bonding temperature is impressed on all parts which subsequently cool to room temperature. As the material cools, it shrinks differing amounts in different materials and in different places within a given material, thus “freezing in” stress that, unless relieved, will exist for the life of the bonded part. Depending on circumstances, the bond line may be sufficiently stressed to fail during the cooling process. Model Geometry Silicon Wafer Glass Silicon Wafer Anodic Bond Line Anodic Bond Line Strained Structure – Shrinkage is Greatly Magnified Shrinkage Shrinkage Temperature Gradient During Cooling Strain Distribution Field – Horizontal Direction Strain Distribution Field – Vertical Direction Strain Distribution Field – Vector Plot Stress Distribution Field – Horizontal Direction Stress Distribution Field – Vertical Direction Shear Stress Distribution Field Stress Distribution Field – Tension Principal Stress Distribution Field – Horizontal Component Principal Stress Distribution Field – Vertical Component Angle of Principal Stress Distribution Field Von Mises Stress Distribution Field Strain Distribution Field – Horizontal Component Stress Distribution Field – Horizontal Component Stress Distribution Field – Vertical Component Summary and Conclusions A finite element model has been developed that allows insight into the field distribution of stress and strain in an anodic bonded glass-silicon MEMS m