Mapping of ion-implanted n-SiC schottky contacts using scanning internal photoemission microscopy.pdfVIP

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Mapping of ion-implanted n-SiC schottky contacts using scanning internal photoemission microscopy.pdf

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Mapping of ion-implanted n-SiC schottky contacts using scanning internal photoemission microscopy.pdf

Materials Science in Semiconductor Processing xx (xxxx) xxxx–xxxx Contents lists available at ScienceDirect Materials Science in Semiconductor Processing journal homepage: /locate/mssp Mapping of ion-implanted n-SiC schottky contacts using scanning internal photoemission microscopy Shingo Murasea,?, Tomoyoshi Mishimab, Tohru Nakamurab, Kenji Shiojimaa a Graduate School of Electrical and Electronics Engineering, University of Fukui, 3-9-1 Bunkyo, Fukui 910-8507, Japan b Research Centre for Micro-Nano Technology, Hosei University, 3-11-15 Midori-cho, Koganei, Tokyo 184-0003, Japan ARTICLE INFO Keywords: SiC Schottky contact Ion implantation Scanning internal photoemission microscopy Damage characterization ABSTRACT Nitrogen-ion-implantation damage on SiC has been clearly imaged using scanning internal photoemission microscopy (SIPM). Ni Schottky contacts were formed on selectively N-ion-implanted n-SiC surfaces at 80 keV with an ion dose of 1×1015 cm?2. A photocurrent, Y (photoyield; de?ned as photocurrent per incident photon), was detected by focusing and scanning a laser beam over the contacts. The N-ion-implanted regions were clearly imaged with Y measurements. Y was detected even where the implanted region is protruding out of the electrode in the unannealed sample. We also found signi?cant increase of Y in the periphery of the ionimplanted region. We con?rmed that SIPM is a powerful tool for mapping damages due to ion implantation. 1. Introduction Silicon carbide (SiC) semiconductors are very attractive for highpower, high-temperature, and radiation tolerant applications due to their material properties such as large band gap, high electron saturation velocity, high breakdown ?eld, and high thermal conductivity [1]. A SiC high-power module con?gured by Schottky barrier diodes and metal–oxide–semiconductor ?eld-e?ect transistors has been commercialized [2]. Because SiC has a small di?usivity of dopant impurities, ion implantation is widely used to form conductive