Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaNGaN-on-SiC HFETs.pdfVIP

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Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaNGaN-on-SiC HFETs.pdf

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Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaNGaN-on-SiC HFETs.pdf

Microelectronics Reliability 68 (2017) 2–4 Contents lists available at ScienceDirect Microelectronics Reliability journal homepage: /locate/microrel Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs A. Pooth a,b,?, J. Bergsten c, N. Rorsman c, H. Hirshy d, R. Perks d, P. Tasker d, T. Martin b, R.F. Webster a, D. Cherns a, M.J. Uren a, M. Kuball a a HH Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK b IQE (Europe) Ltd., Pascal Close, St. Mellons, Cardiff CF3 0LW, UK c Chalmers University of Technology, Kemiv. 9, 41296 Gothenburg, Sweden d Cardiff School of Engineering, Cardiff University, Cardiff CF24 0YF, UK article info Article history: Received 13 July 2016 Received in revised form 5 October 2016 Accepted 3 November 2016 Available online 15 November 2016 Keywords: GaN Transistor Ohmic contact Morphology Leakage current Current collapse abstract The morphology and impact on leakage currents of two different ohmic metal stacks for GaN based transistor devices is investigated in this work. The results have implications for the performance and reliability of a GaN transistor device. A low temperature Ta based and a higher temperature anneal Ti based metallization are compared. The low temperature process shows a smoother metal semiconductor interface together with several orders of magnitude lower vertical and lateral leakage compared to the conventional higher temperature process. In addition to the leakage tests, back bias ramping experiments are performed unveiling potential advantages of the conventional approach in mitigating current collapse. However the low leakage will enable higher voltage operation making the low temperature process the preferable choice for high power RF applications, if simultaneously current collapse can be controlled. ? 2016 Elsevier Ltd. All rights reserved. 1. Introduction The commonly used metal stacks on GaN HFET epitaxial material for ohmic contact formation are