Transport properties of Gallium Phosphide based Schottky contact with thin insulating layer.pdfVIP

下载本文档

1
0
约2.41万字
约 5页
2017-03-16 发布于天津
举报
版权申诉

Transport properties of Gallium Phosphide based Schottky contact with thin insulating layer.pdf

1、本文档共5页，可阅读全部内容。
2、原创力文档（book118）网站文档一经付费（服务费），不意味着购买了该文档的版权，仅供个人/单位学习、研究之用，不得用于商业用途，未经授权，严禁复制、发行、汇编、翻译或者网络传播等，侵权必究。
3、本站所有内容均由合作方或网友上传，本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺！文档内容仅供研究参考，付费前请自行鉴别。如您付费，意味着您自己接受本站规则且自行承担风险，本站不退款、不进行额外附加服务；查看《如何避免下载的几个坑》。如果您已付费下载过本站文档，您可以点击这里二次下载。
4、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等，请点击“版权申诉”（推荐），也可以打举报电话：400-050-0827(电话支持时间：9:00-18:30)。
5、该文档为VIP文档，如果想要下载，成为VIP会员后，下载免费。
6、成为VIP后，下载本文档将扣除1次下载权益。下载后，不支持退款、换文档。如有疑问请联系我们。
7、成为VIP后，您将拥有八大权益，权益包括：VIP文档下载权益、阅读免打扰、文档格式转换、高级专利检索、专属身份标志、高级客服、多端互通、版权登记。
8、VIP文档为合作方或网友上传，每下载1次，网站将根据用户上传文档的质量评分、类型等，对文档贡献者给予高额补贴、流量扶持。如果你也想贡献VIP文档。上传文档

Transport properties of Gallium Phosphide based Schottky contact with thin insulating layer.pdf

Materials Science in Semiconductor Processing 61 (2017) 145–149 Contents lists available at ScienceDirect Materials Science in Semiconductor Processing journal homepage: /locate/mssp Transport properties of Gallium Phosphide based Schottky contact with thin insulating layer N. Shiwakotia, A. Bobbya, K. Asokanb, Bobby Antonya,? a Department of Applied Physics, Indian Institute of Technology (ISM), Dhanbad 826004, India b Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India MARK ARTICLE INFO Keywords: Au/GaP Schottky contacts Transport properties Barrier inhomogeneity Conduction mechanisms ABSTRACT The current-voltage (I-V) characteristics of Au/n-GaP Schottky barrier diode was analyzed in wide temperature range of 220–400 K. The conduction mechanism in the low bias region, except for 220 K and 240 K, was identi?ed as tunneling (TN). Nevertheless, thermionic emission (TE) becomes dominant as the voltage increases. The diode parameters were evaluated in this region by TE model incorporating the concept of thin insulating layer. The series resistance (Rs) of the device was found to decrease with increase in temperature. In the 220–320 K temperature range, as reported for most of the Schottky diodes, the zero-bias barrier height (?b0) decreases and the ideality factor (η) increases with the decrease of temperature. The value of modi?ed Richardson constant (A**) obtained agrees well with the theoretical value. However, in the 320–400 K range, the variation of η and ?b0 with temperature shows opposite trend, which is speculated as due to the change in conduction pattern by the temperature induced modi?cations at the interface. 1. Introduction During the past few decades, several studies have been carried out to infer on the reliability of Schottky devices under various detrimental operating conditions. The understanding of thermal stability of Schottky devices at high temperatures is one such area, but inadequately explored. Although Schottky b