半导体物理第14次课.pptVIP

Why silicon based OE Materials? Car GaAs does not run faster enough, either. Progresses in Si-photonics Porous silicon Si/SiO2/Si superlattice FeSi2 : direct band? Dislocation loops: B implantation Zone folding: GeSi short period superlattice Si, Ge Quantum dots The second way The 3rd way Si-based optoelectronic materials Si-Based Optoelectronic IC Optical device: Direct band materials Electronic devices: Si Technically feasible, relatively low cost. The origin of PL from porous silicon Shortcomings and Modifications Not compatible with Si IC technology Difficult to inject carriers into SiO2 Si/O/Si superlattice Berried SiO2 layer by ion implantation Si+ ion implanted into SiO2 S-type negative resistance in ZnO-Si structure LED 2: Dislocation loopsWai Lek Ng, University of Surrey, UK 2. Si Based Light Detector 3. Si-based Modulator 4. Si-based Waveguide Schematic diagram of OEIC on Si Part II Growth and characterization of silicon-based thin films In the State Key Laboratory for Silicon Materials Silicon Based Materials SiGe SiGeC /Si Ge dots/Si GaN/Si ZnO/Si LiNbO3/Si Porous nano Silicon 1. Porous Silicon(1st reported by Canham, GB, 1990) The first report of light emission from Silicon Maybe the Landmark for Si based LED Under sunlight Under UV light Porous silicon made in 1992 in SKLSM Photoluminescence of porous silicon films Ec Ev ~9eV Visible 2. Growth of SiGe, SiGeC/Si Microwave Devices HBT MODFET Light Detectors Light Wave Guide LED, LD XRD rocking curves of SiGe/Si by UHVCVD FWHM broadens as the content of Ge increases SiGe /Si by UHV/CVD SiGeC/Sigrown at 750℃ No SiC was formed Maximum Carbon content ~ 2.2% XRD of SiGeC /Si by UHV/CVD(Shows less strain in the epilayer) 3. Growth of Ge Dots on Si Quantum devices Infrared photo-detector Quantum dot LED and LD Growth of Ge Quantum Dots on porous Silicon by UHV/CVD AFM image Ge dot size: 6nm PL spectrum (T=10K)