变容二极管SVC251Apm.doc

Apm JFET 2SK427 AM Tuner RF Amplifier Applications Silicon N Channel Junction Type *High Yfs=17ms(typ)(VDS=5V,VGS=0) *High VGDS=--12V Top view *Low noise:NF=1.5dB(typ) (VDS=5V,ID=1mA,f=1kHz,RG=1kΩ) 　 *High input impedance:IGSS=-1nA,VGS=-12V) 3 2 1 Package: TO-92S ; TO-92M 1 2 3 1: Source TO-92S 2: Gate 3: Drain Absolute Maximum rating at Ta=25℃ SYMBOL PARAMETER MIN. MAX. UNIT VGDS Gate-Drain voltage 12 V IG Gate current 10 mA Tstg storage temprature -55 +150 ℃ Tj operating junction temperature -55 +125 ℃ PD Drain power dissipation 200 mW Electrical Characteristics at Ta=25℃ SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT IGSS Gate cut-off current VGS=-12V -1.0 nA V(BR)GDS G-D breakdown voltage VDS=0,IG=-10uA -12 V IDSS Drain current VDS=5V,VGS=0 1.2 12 mA VGS(off) G-S cut-off voltage VDS=5V,ID=0.1uA -0.5 -1.5 V Yfs Forward transfer admittance VDS=5V,VGS=0 f=1khz 8.0 17 mS Ciss Input capacitance VDS=5V,VGS=0 f=1Mhz 7.0 pF Crss Reverse transfer capacitance VGD=-10V,ID=0,f=1Mhz 2.0 pF NF(