X and Ku-Band 8 element phased array IEEE JSSC.pdfVIP

1360 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 43, NO. 6, JUNE 2008 An X- and Ku-Band 8-Element Phased-Array Receiver in 0.18-m SiGe BiCMOS Technology Kwang-Jin Koh, Student Member, IEEE, and Gabriel M. Rebeiz, Fellow, IEEE Abstract—This paper demonstrates an 8-element phased array receiver in a standard 0.18- m SiGe BiCMOS (1P6M, SiGe HBT  GHz) technology for X- and K -band applications. The array receiver adopts the All-RF architecture, where the phase shifting and power combining are done at the RF level. With the in- tegrations of all the digital control circuitry and ESD protection for all I/O pads, the receiver consumes a current of 100 200 mA from a 3.3 V supply voltage. The receiver shows 1.5 24.5 dB of power gain per channel from a 50  load at 12 GHz with bias current control, and an associated NF of 4.2 dB (@ max. gain) to 13.2 dB (@ min. gain). The RMS gain error is 0.9 dB and the RMS phase error is  at 6–18 GHz for all 4-bit phase states. The measured group delay is 162.5 12.5 ps for all phase states at 6–18 GHz. The RMS phase mismatch and RMS gain mismatch among the eight channels are   and 0.4 dB, respectively, for all 16 phase states, over 6–18 GHz. The 8-element array can operate instanta- neously at any center frequency and with a wide bandwidth (3 to 6 GHz, depending on the center frequency) given primarily by the 3 dB gain variation in the 6–18 GHz range. To our knowledge, this is the first demonstration of an All-RF phased array on a silicon chip with very low RMS phase and gain errors at 6–18 GHz. The chip size is     mm including all pads. Index Terms—BiCMOS analog integrated circuits, MIMO sys- tems, phase shifters, phased arrays, quadrature networks, radar, SiGe BiCMOS, smart antennas, wireless communications. I. INTRODUCTION ELECTRICALLY scanned phased arrays allow beamsteering much faster than mechanical methods, and strong interference from different directions can be placed in the nulls of a radiation pattern so as not to i