Lin InGaN GaN light emitting diodes with Ni Au, Ni ITO Solid state electronics 47 849 2003.pdf

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Lin InGaN GaN light emitting diodes with Ni Au, Ni ITO Solid state electronics 47 849 2003.pdf

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Lin InGaN GaN light emitting diodes with Ni Au, Ni ITO Solid state electronics 47 849 2003

InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts Y.C. Lin a, S.J. Chang a,*, Y.K. Su a, T.Y. Tsai a, C.S. Chang a, S.C. Shei b, C.W. Kuo c, S.C. Chen d a Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, No. 1 Ta Hseuh Road, Tainan 70101, Taiwan b South Epitaxy Corporation, Hsin-Shi 744, Taiwan c Department of Electrical Engineering, Kun-Shan University of Technology, Yung-Kang 710, Taiwan d Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu 640, Taiwan Received 1 September 2002; received in revised form 5 October 2002; accepted 14 October 2002 Abstract The optical and electrical properties of indium tin oxide (ITO)(60 nm), Ni(3.5 nm)/ITO(60 nm) and Ni(5 nm)/Au(5 nm) films were studied. It was found that the normalized transmittance of ITO and Ni/ITO films could reach 98.2% and 86.6% at 470 nm, which was much larger than that of the Ni/Au film. It was also found that both Ni/ITO and Ni/Au could form good ohmic contact on top of p-GaN. In contrast, ITO on p-GaN was electrically poor and non-ohmic. Nitride-based light-emitting diodes (LEDs) with these three p-contact layers were also fabricated. It was found that the LED forward voltage was 3.65, 3.26 and 3.24 V for the LEDs with ITO, Ni/ITO and Ni/Au p-contact layer, respec- tively. With a 20 mA current injection, it was also found that measured output power was 7.50, 6.59 and 5.26 mW for the LEDs with ITO, Ni/ITO and Ni/Au p-contact layer, respectively. Although the LED with ITO p-contact could provide the largest output intensity, its lifetime was the shortest due to severe heating effect. 2002 Elsevier Science Ltd. All rights reserved. Keywords: ITO; Ni/ITO; LED; InGaN/GaN; EL 1. Introduction Group III nitride semiconductors have recently at- tracted much attentions for their versatile applications as high-brightness light emitting diodes (LEDs) which can be used in full-color displays,