2SCR553PT100;中文规格书,Datasheet资料.pdf

1/4 ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A Midium Power Transistors (50V / 2A) 2SCR553P ?Structure ?Dimensions (Unit : mm) NPN Silicon epitaxial planar transistor ?Features 1) Low saturation voltage, typically VCE (sat) = 0.13V (Max.) (IC / IB= 700mA / 35mA) 2) High speed switching ?Applications Driver ? Inner circuit (Unit : mm) Package Taping Code T100 Basic ordering unit (pieces) 1000 2SCR553P ? ?Absolute maximum ratings (Ta = 25?C) Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V DC IC 2 A Pulsed ICP 4 A PD 0.5 W PD 2 W Junction temperature Tj 150 ?C Range of storage temperature Tstg -55 to 150 ?C *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm3) ?Packaging specifications Type Parameter Collector current Power dissipation *1 *2 *3 Abbreviated symbol : NG (1) (2) (3) (1) Base (2) Collector (3) Emitter (1) (3) (2) / 2/4 ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A Data Sheet 2SCR553P ?Electrical characteristic (Ta = 25?C)? Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO 50 - - V IC= 1ｍA Collector-base breakdown voltage BVCBO 50 - - V IC= 100μA Emitter-base breakdown voltage BVEBO 6 - - V IE= 100μA Collector cut-off current ICBO - - 1 ?A VCB= 50V Emitter cut-off current IEBO - - 1 ?A VEB= 4V Collector-emitter staturation voltage VCE(sat) - 130 350 mV IC= 700mA, IB= 35mA DC current gain hFE 180 - 450 - VCE= 2V, IC= 50mA Turn-on time ton - 45 - ns Storage time tstg - 420 - ns Fall time tf - 75 - ns *1 Pulsed *2 See switching time test circuit - 12Collector output capacitance Cob ConditionsParameter MHz360 - VCE= 10V IE=-300mA, f=100MHz Transition frequency fT - pF VCB= 10V, IE=0A f=1MHｚ - IC= 1A,IB1= 100mA, IB2=-100mA,VCC 10V *2 *2 *2 ~_ *1 *1 / 3/4 ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.A Data Sheet 2SCR553